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BZT55C Datasheet(PDF) 3 Page - TEMIC Semiconductors

Part No. BZT55C
Description  Silicon Epitaxial Planar Z-Diodes
Download  6 Pages
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Maker  TEMIC [TEMIC Semiconductors]
Homepage  http://www.temic.de
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BZT55C Datasheet(HTML) 3 Page - TEMIC Semiconductors

   
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TELEFUNKEN Semiconductors
BZT55C...
3
Rev. A1: 12.12.1994
Typical Characteristics (Tj = 25
_C unless otherwise specified)
0
40
80
120
160
0
100
300
400
500
600
Tamb – Ambient Temperature ( °C )
200
95 9602
200
Figure 1 : Total Power Dissipation vs. Ambient Temperature
–60
0
60
120
180
0.8
0.9
1.0
1.1
1.2
1.3
Tj – Junction Temperature ( °C )
240
95 9599
VZtn=VZt/VZ(25°C)
TKVZ=10 10–4/K
8
10–4/K
–4
10–4/K
6
10–4/K
4
10–4/K
2
10–4/K
–2
10–4/K
0
Figure 3 : Typical Change of Working Voltage vs. Junction
Temperature
0
5
10
15
0
50
100
150
200
VZ – Z-Voltage ( V )
25
95 9601
20
Tj =25°C
VR =2V
Figure 5 : Diode Capacitance vs. Z–Voltage
0
5
10
15
20
1
10
100
1000
VZ – Z-Voltage ( V )
25
95 9598
IZ=5mA
Tj =25°C
Figure 2 : Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
010
20
30
–5
0
5
10
15
VZ – Z-Voltage ( V )
50
95 9600
40
IZ=5mA
Figure 4 : Temperature Coefficient of Vz vs. Z–Voltage
0
0.2
0.4
0.6
0.8
0.001
0.01
0.1
1
10
100
1.0
95 9605
VF – Forward Voltage ( V )
Tj =25°C
Figure 6 : Forward Current vs. Forward Voltage


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