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BZT55C Datasheet(PDF) 1 Page - TEMIC Semiconductors

Part No. BZT55C
Description  Silicon Epitaxial Planar Z-Diodes
Download  6 Pages
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Maker  TEMIC [TEMIC Semiconductors]
Homepage  http://www.temic.de
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BZT55C Datasheet(HTML) 1 Page - TEMIC Semiconductors

   
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TELEFUNKEN Semiconductors
BZT55C...
1
Rev. A1: 12.12.1994
Silicon Epitaxial Planar Z–Diodes
Features
D Very sharp reverse characteristic
D Low reverse current level
D Very high stability
D Low noise
D Available with tighter tolerances
Applications
Voltage stabilization
94 9373
Absolute Maximum Ratings
Tj = 25
_C
Parameter
Test Conditions
Type
Symbol
Value
Unit
Power dissipation
RthJA
x300K/W
PV
500
mW
Z–current
IZ
PV/VZ
mA
Junction temperature
Tj
175
°C
Storage temperature range
Tstg
–65...+175
°C
Maximum Thermal Resistance
Tj = 25
_C
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient
on PC board 50mmx50mmx1.6mm
RthJA
500
K/W
Characteristics
Tj = 25
_C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward voltage
IF=200mA
VF
1.5
V


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