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FZTA92 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part No. FZTA92
Description  PNP Silicon Planar High Voltage Transistor
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Maker  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Homepage  www.chinakexin.com/
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 1 page
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SMD Type
Transistors
1
www.kexin.com.cn
SOT-223
Unit: mm
3.00+0.1
-0.1
0.70+0.1
-0.1
2.9
4.6
6.50+0.2
-0.2
3.50+0.2
-0.2
0.90+0.2
-0.2
7.00+0.3
-0.3
12
4
3
1 Base
2 Collector
3 Emitter
4 Collector
PNP Silicon Planar High Voltage Transistor
FZTA92
Features
High breakdown voltage
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-300
V
Collector-Emitter Voltage
VCEO
-300
V
Emitter-Base Voltage
VEBO
-5
V
Base Current
IB
-100
mA
Continuous Collector Current
IC
-500
mA
Power Dissipation at Tamb=25°CPtot
2W
Operating and Storage Temperature Range
Tj:Tstg
-55to+150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
V(BR)CBO
IC=-100ìA, IE=0
-300
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-1mA, IB=0*
-300
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=-100ìA, IC=0
-5
V
Collector Cut-Off Current
ICBO
VCB=-200V, IE=0
-0.25
ìA
Emitter Cut-Off Current
IEBO
VEB=-3V, IC=0
-0.1
ìA
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-20mA, IB=-2mA
-0.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=-20mA, IB=-2mA
-0.9
V
IC=-1mA, VCE=-10V*
25
IC=-10mA, VCE=-10V*
40
IC=-30mA, VCE=-10V*
25
Transition Frequency
fT
IC=-10mA, VCE=-20V,f=20MHz
50
MHz
Output Capacitance
Cobo
VCB=-20V, f=1MHz
6
pF
* Measured under pulsed conditions. Pulse width=300ìs. Duty cycle
2%
hFE
Static Forward Current Transfer Ratio




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