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FZTA42 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part No. FZTA42
Description  NPN Silicon Planar High Voltage Transistor
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Maker  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Homepage  www.chinakexin.com/
Logo 

   
 1 page
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SMD Type
Transistors
1
www.kexin.com.cn
SOT-223
Unit: mm
3.00+0.1
-0.1
0.70+0.1
-0.1
2.9
4.6
6.50+0.2
-0.2
3.50+0.2
-0.2
0.90+0.2
-0.2
7.00+0.3
-0.3
12
4
3
1 Base
2 Collector
3 Emitter
4 Collector
NPN Silicon Planar High Voltage Transistor
FZTA42
Features
Suitable for video output stages in TV sets
and switch mode power supplies
High breakdown voltage
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
5V
Base Current
IB
100
mA
Continuous Collector Current
IC
500
mA
Power Dissipation at Tamb=25
Ptot
2W
Operating and Storage Temperature Range
Tj:Tstg
-55to+150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
V(BR)CBO
IC=100ìA, IE=0
300
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, IB=0*
300
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=100ìA, IC=0
5
V
Collector Cut-Off Current
ICBO
VCB=200V, IE=0
0.1
ìA
Emitter Cut-Off Current
IEBO
VEB=5V, IC=0
0.1
ìA
Collector-Emitter Saturation Voltage
VCE(sat)
IC=20mA, IB=2mA
0.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=20mA, IB=2mA
0.9
V
IC=1mA, VCE=10V*
25
IC=10mA, VCE=10V*
40
IC=30mA, VCE=10V*
40
Transition Frequency
fT
IC=10mA, VCE=20V,f=20MHz
50
MHz
Output Capacitance
Cobo
VCB=20V, f=1MHz
6
pF
* Measured under pulsed conditions. Pulse width=300ìs. Duty cycle
2%
hFE
Static Forward Current Transfer Ratio




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