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FZT956 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Part No. FZT956
Description  NPN Silicon Planar High Voltage Transistor
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Maker  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Homepage  www.chinakexin.com/
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 2 page
background image
2
SMD Type
Transistors
www.kexin.com.cn
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
V(BR)CBO
IC=-100ìA
-180
-210
V
Collector-Emitter Breakdown Voltage
V(BR)CER
IC=-1ìA, RB
1kÙ
-180
-210
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-10mA*
-140
-170
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=-100ìA
-6
-8
V
VCB=-150V
-50
nA
VCB=-150V,Tamb=100
-1
ìA
VCB=-150V
-50
nA
VCB=-150V,Tamb=100
-1
ìA
Emitter Cut-Off Current
IEBO
VEB=-6V
-10
nA
IC=-100mA, IB=-5mA*
-30
-60
mV
IC=-500mA,IB=-50mA*
-70
-120
mV
IC=-1A, IB=-100mA*
-110
-150
mV
IC=-3A, IB=-300mA*
-275
-370
mV
Base-Emitter Saturation Voltage
VBE(sat)
IC=-3A, IB=-300mA*
-970
-1110
mV
Base-Emitter Turn-On Voltage
VBE(on)
IC=-3A, VCE=-5V*
-830
-950
mV
IC=-10mA, VCE=-5V*
100
200
IC=-1A, VCE=-5V*
100
200
300
IC=-3A, VCE=-5V*
75
140
IC=-10A, VCE=-5V*
10
Transition Frequency
fT
IC=-100mA, VCE=-10V,f=50MHz
110
MHz
Output Capacitance
Cobo
VCB=-20V, f=1MHz
40
pF
ton
IC=-1A, IB1=-100mA
68
ns
toff
IB2=100mA, VCC=-50V
1030
ns
*Measured under pulsed conditions. Pulse width=300ìs. Duty cycle
2%
Switching Times
Collector-Emitter Saturation Voltage
Collector Cut-Off Current (R
1kÙ)
Collector Cut-Off Current
ICBO
ICER
Static Forward Current Transfer Ratio
VCE(sat)
hFE
FZT955;FZT956




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