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TC4420 Datasheet(PDF) 2 Page - TelCom Semiconductor, Inc

Part No. TC4420
Description  6A HIGH-SPEED MOSFET DRIVERS
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Maker  TELCOM [TelCom Semiconductor, Inc]
Homepage  http://www.telcom-semi.com
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TC4420 Datasheet(HTML) 2 Page - TelCom Semiconductor, Inc

   
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4-226
TELCOM SEMICONDUCTOR, INC.
6A HIGH-SPEED MOSFET DRIVERS
TC4420
TC4429
ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1 High Input Voltage
2.4
1.8
V
VIL
Logic 0 Low Input Voltage
1.3
0.8
V
VIN (Max)
Input Voltage Range
–5
VDD+0.3
V
IIN
Input Current
0V
≤ VIN ≤ VDD
– 10
10
µA
Output
VOH
High Output Voltage
See Figure 1
VDD – 0.025
V
VOL
Low Output Voltage
See Figure 1
0.025
V
RO
Output Resistance, High
IOUT = 10 mA, VDD = 18V
2.1
2.8
RO
Output Resistance, Low
IOUT = 10 mA, VDD = 18V
1.5
2.5
IPK
Peak Output Current
VDD = 18V (See Figure 5)
6
A
IREV
Latch-Up Protection
Duty Cycle
≤ 2%
1.5
A
Withstand Reverse Current
t
≤ 300 µs
Switching Time (Note 1)
tR
Rise Time
Figure 1, CL = 2500 pF
25
35
nsec
tF
Fall Time
Figure 1, CL = 2500 pF
25
35
nsec
tD1
Delay Time
Figure 1
55
75
nsec
tD2
Delay Time
Figure 1
55
75
nsec
Power Supply
IS
Power Supply Current
VIN = 3V
0.45
1.5
mA
VIN = 0V
55
150
µA
VDD
Operating Input Voltage
4.5
18
V
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage ............................................... – 5V to > VDD
Input Current (VIN > VDD) .........................................50mA
Power Dissipation, TA ≤ 70°C
PDIP ...............................................................730mW
SOIC ...............................................................470mW
CerDIP ............................................................ 800mW
5-Pin TO-220 ...................................................... 1.6W
Package Power Dissipation (TA ≤ 70°C)
5-Pin TO-220 (With Heat Sink) ......................... 1.60W
Derating Factors (To Ambient)
PDIP ............................................................. 8mW/
°C
SOIC ............................................................. 4mW/
°C
CerDIP ....................................................... 6.4mW/
°C
5-Pin TO-220 .............................................. 12mW/
°C
Thermal Impedances (To Case)
5-Pin TO-220 RθJ-C ........................................ 10°C/W
Storage Temperature Range ................ – 65
°C to +150°C
Operating Temperature (Chip) .............................. +150
°C
Operating Temperature Range (Ambient)
C Version ............................................... 0
°C to +70°C
I Version ........................................... – 25
°C to +85°C
E Version .......................................... – 40
°C to +85°C
M Version ....................................... – 55
°C to +125°C
Lead Temperature (Soldering, 10 sec) ................. +300
°C
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.


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