Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

TC4404 Datasheet(PDF) 2 Page - TelCom Semiconductor, Inc

Part No. TC4404
Description  1.5A DUAL OPEN-DRAIN MOSFET DRIVERS
Download  6 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  TELCOM [TelCom Semiconductor, Inc]
Homepage  http://www.telcom-semi.com
Logo 

TC4404 Datasheet(HTML) 2 Page - TelCom Semiconductor, Inc

   
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
4-220
TELCOM SEMICONDUCTOR, INC.
ABSOLUTE MAXIMUM RATINGS
Supply Voltage ......................................................... +22V
Maximum Chip Temperature ................................. +150
°C
Storage Temperature Range ................ – 65
°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300
°C
ELECTRICAL CHARACTERISTICS:
Specifications measured at TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1 High Input Voltage
2.4
V
VIL
Logic 0 Low Input Voltage
0.8
V
IIN
Input Current
– 0V
V
IN
V
DD
– 1
1
µA
Output
VOH
High Output Voltage
VDD – 0.025
V
VOL
Low Output Voltage
0.025
V
RO
Output Resistance
IOUT = 10 mA,VDD = 18V; Any Drain
7
10
IPK
Peak Output Current (Any Drain)
Duty cycle < 2%, t
≤ 300µsec
1.5
A
IDC
Continuous Output Current (Any Drain)
100
mA
IR
Latch-Up Protection (Any Drain)
Duty cycle < 2%, t
≤ 300µsec
> 500
mA
Withstand Reverse Current
Switching Time (Note 1)
tR
Rise Time
Figure 1, CL = 1000 pF
25
30
nsec
tF
Fall Time
Figure 1, CL = 1000 pF
25
30
nsec
tD1
Delay Time
Figure 1, CL = 1000 pF
15
30
nsec
tD2
Delay Time
Figure 1, CL = 1000 pF
32
50
nsec
Power Supply
IS
Power Supply Current
VIN = 3V (Both Inputs)
4.5
mA
VIN = 0V (Both Inputs)
0.4
NOTE:
1. Switching times guaranteed by design.
thus minimizing chip count. Unused open drains should be
returned to the supply rail that their device sources are
connected to (pull-downs to ground, pull-ups to VDD), to
prevent static damage. In addition, in situations where
timing resistors or other means of limiting crossover currents
are used, like drains may be paralleled for greater current
carrying capacity.
These devices are built to operate in the most de-
manding electrical environments. They will not latch up
under any conditions within their power and voltage rat-
ings; they are not subject to damage when up to 5V of
noise spiking of either polarity occurs on their ground pin;
and they can accept, without damage or logic upset, up to
1/2 amp of reverse current (of either polarity) being forced
back into their outputs. All terminals are fully protected
against up to 2 kV of electrostatic discharge.
Package Thermal Resistance
CerDIP RθJ-A ............................................... 150°C/W
CerDIP RθJ-C ................................................. 55°C/W
PDIP RθJ-A .................................................. 125°C/W
PDIP RθJ-C .................................................... 45°C/W
SOIC RθJ-A .................................................. 155°C/W
SOIC RθJ-C .................................................... 45°C/W
Operating Temperature Range
C Version ............................................... 0
°C to +70°C
E Version .......................................... – 40
°C to +85°C
M Version ....................................... – 55
°C to +125°C
Package Power Dissipation (TA ≤ 70°C)
Plastic ............................................................. 730mW
CerDP ............................................................. 800mW
SOIC ............................................................... 470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
TC4404
TC4405
1.5A DUAL OPEN-DRAIN
MOSFET DRIVERS


Html Pages

1  2  3  4  5  6 


Datasheet Download



Related Electronics Part Number

Part NumberComponents DescriptionHtml ViewManufacturer
TC44041.5A Dual Open-Drain MOSFET Drivers 1 2 3 4 5 MoreMicrochip Technology
TC44261.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS 1 2 3 4 5 MoreTelCom Semiconductor, Inc
TC4426A1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS 1 2 3 4 5 TelCom Semiconductor, Inc
MAX4426Dual High-Speed 1.5A MOSFET Drivers 1 2 3 4 5 MoreMaxim Integrated Products
TC4261.5A Dual High-Speed Power MOSFET Drivers 1 2 3 4 5 MoreMicrochip Technology
TC44261.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS 1 2 3 4 5 MoreMicrochip Technology
CLM44261.5A Dual High Speed MOSFET Drivers 1 2 3 4 Calogic, LLC
TC4426A1.5A Dual High-Speed Power MOSFET Drivers 1 2 3 4 5 MoreMicrochip Technology
TC4261.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS 1 2 3 4 5 TelCom Semiconductor, Inc

Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn