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TC426 Datasheet(PDF) 2 Page - TelCom Semiconductor, Inc

Part No. TC426
Description  1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS
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Maker  TELCOM [TelCom Semiconductor, Inc]
Homepage  http://www.telcom-semi.com
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TC426 Datasheet(HTML) 2 Page - TelCom Semiconductor, Inc

   
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4-170
TELCOM SEMICONDUCTOR, INC.
TC426
TC427
TC428
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
ELECTRICAL CHARACTERISTICS: TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1, High Input Voltage
2.4
V
VIL
Logic 0, Low Input Voltage
0.8
V
IIN
Input Current
0V
≤ VIN ≤ VDD
–1
1
µA
Output
VOH
High Output Voltage
VDD – 0.025
V
VOL
Low Output Voltage
0.025
V
ROH
High Output Resistance
IOUT = 10 mA, VDD = 18V
10
15
ROL
Low Output Resistance
IOUT = 10 mA, VDD = 18V
6
10
IPK
Peak Output Current
1.5
A
Switching Time (Note 1)
tR
Rise Time
Test Figure 1/2
30
nsec
tF
Fall Time
Test Figure 1/2
30
nsec
tD1
Delay Time
Test Figure 1/2
50
nsec
tD2
Delay Time
Test Figure 1/2
75
nsec
Power Supply
IS
Power Supply Current
VIN = 3V (Both Inputs)
8
mA
VIN = 0V (Both Inputs)
0.4
mA
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, Any Terminal .... VDD + 0.3V to GND – 0.3V
Power Dissipation (TA ≤ 70°C)
Plastic ...............................................................730mW
CerDIP .............................................................. 800mW
SOIC ................................................................. 470mW
Derating Factor
Plastic ............................................................. 8mW/
°C
CerDIP ......................................................... 6.4mW/
°C
SOIC ............................................................... 4mW/
°C
Operating Temperature Range
C Version ................................................. 0
°C to +70°C
I Version .............................................. – 25
°C to +85°C
E Version ............................................ – 40
°C to +85°C
M Version .......................................... – 55
°C to +125°C
Maximum Chip Temperature ................................. +150
°C
Storage Temperature Range ................ – 65
°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300
°C
NOTE: 1. Switching times guaranteed by design.
ELECTRICAL CHARACTERISTICS: Over Operating Temperature Range with 4.5V
≤ VDD ≤ 18V, unless otherwise specified.
Input
VIH
Logic 1, High Input Voltage
2.4
V
VIL
Logic 0, Low Input Voltage
0.8
V
IIN
Input Current
0V
≤ VIN ≤ VDD
–10
10
µA
Output
VOH
High Output Voltage
VDD – 0.025
V
VOL
Low Output Voltage
0.025
V
ROH
High Output Resistance
IOUT = 10 mA, VDD = 18V
13
20
ROL
Low Output Resistance
IOUT = 10 mA, VDD = 18V
8
15
Switching Time (Note 1)
tR
Rise Time
Test Figure 1/2
60
nsec
tF
Fall Time
Test Figure 1/2
30
nsec
tD1
Delay Time
Test Figure 1/2
75
nsec
tD2
Delay Time
Test Figure 1/2
120
nsec
Power Supply
IS
Power Supply Current
VIN = 3V (Both Inputs)
12
mA
VIN = 0V (Both Inputs)
0.6
mA


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