2SA1839 datasheet(1/1 Pages) KEXIN

Part #	2SA1839

Description	PNP Epitaxial Planar Silicon Transistors

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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SMD Type

IC

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SMD Type

Transistors

0.4+0.1

-0.1

2.9+0.1

-0.1

0.95+0.1

-0.1

1.9+0.1

-0.1

1.Base

2.Emitter

3.collector

12

3

Unit: mm

SOT-23

0.1+0.05

-0.01

PNP Epitaxial Planar Silicon Transistors

2SA1839

Features

Very small-sized package permitting 2SA1839-applied

sets to be made small and slim

Small output capacitance.

Low collector-to-emitter saturation voltage

Low ON resistance

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

-15

V

Collector-emitter voltage

VCEO

-10

V

Emitter-base voltage

VEBO

-5

V

Collector current

IC

-100

mA

Collector current (pulse)

ICP

-200

mA

Base current

IB

-20

mA

Collector dissipation

PC

250

mW

Jumction temperature

Tj

150

Storage temperature

Tstg

-55to+150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

IcBO

VCB =-12V , IE =0

-0.1

ìA

Emitter cutoff current

IEBO

VEB =-4V , IC =0

-0.1

ìA

DC current Gain

hFE

VCE =-2V , IC = -5mA

200

600

Gain bandwidth product

fT

VCE =-5V , IC =-10mA

600

MHz

Common base output capacitance

Cob

VCB = -10V , f = 1MHz

0.9

pF

Collector-to-emitter saturation voltage

VCE(sat) IC =-10mA , IB =-1mA

-0.04

-0.15

mV

Base-to-emitter saturation voltage

VBE(sat) IC =-10mA , IB =-1mA

-0.82

-1.1

V

Collector-to-base breakdown voltage

V(BR)CBO IC =-10ìA , IE =0

-15

V

Collector-to-emitter breakdown voltage

V(BR)CEO IC =-1mA , RBE =

-10

V

Emitter-to-base breakdown voltage

V(BR)EBO IE =-10ìA , IC =0

-15

V

ON Resistance

Ron

IB=-3mA,f=1MHz

3.0

Ù

Marking

LS

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2SA1839 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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