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TC1413 Datasheet(PDF) 2 Page - TelCom Semiconductor, Inc

Part No. TC1413
Description  3A HIGH-SPEED MOSFET DRIVERS
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Maker  TELCOM [TelCom Semiconductor, Inc]
Homepage  http://www.telcom-semi.com
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TC1413 Datasheet(HTML) 2 Page - TelCom Semiconductor, Inc

   
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4-202
TELCOM SEMICONDUCTOR, INC.
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, IN A or IN B ..(VDD + 0.3V) to (GND – 5.0V)
Maximum Chip Temperature ................................. +150
°C
Storage Temperature Range ................ – 65
°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300
°C
Package Thermal Resistance
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C .................................................. 50°C/W
PDIP RθJ-A ................................................... 125°C/W
PDIP RθJ-C ..................................................... 42°C/W
SOIC RθJ-A ................................................... 155°C/W
SOIC RθJ-C ..................................................... 45°C/W
Operating Temperature Range
C Version ............................................... 0
°C to +70°C
E Version .......................................... – 40
°C to +85°C
Power Dissipation (TA ≤ 70°C)
Plastic ............................................................. 730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V
≤ VDD ≤ 16V, unless other-
wise specified. Typical values are measured at TA = 25°C; VDD =16V.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Input
VIH
Logic 1 High Input Voltage
2.0
V
VIL
Logic 0 Low Input Voltage
0.8
V
IIN
Input Current
– 5V
≤ VIN ≤ VDD
TA = 25°C– 1
1
µA
– 40
°C ≤ TA ≤ 85°C
– 10
10
Output
VOH
High Output Voltage
DC Test
VDD – 0.025
V
VOL
Low Output Voltage
DC Test
0.025
V
RO
Output Resistance
VDD = 16V, IO = 10 mA TA = 25°C
2.7
4
0
°C ≤ TA ≤ 70°C
3.3
5
– 40
°C ≤ TA ≤ 85°C
3.3
5
IPK
Peak Output Current
VDD = 16V
3.0
A
IREV
Latch-Up Protection
Duty Cycle
≤ 2%
0.5
A
Withstand Reverse Current
t
≤ 300 µsec
Switching Time (Note 1)
tR
Rise Time
Figure 1
TA = 25°C
20
28
nsec
0
°C ≤ TA ≤ 70°C
22
33
– 40
°C ≤ TA ≤ 85°C
—24
33
tF
Fall Time
Figure 1
TA = 25°C
20
28
nsec
0
°C ≤ TA ≤ 70°C
22
33
– 40
°C ≤ TA ≤ 85°C
—24
33
tD1
Delay Time
Figure 1
TA = 25°C
35
45
nsec
0
°C ≤ TA ≤ 70°C
40
50
– 40
°C ≤ TA ≤ 85°C
—40
50
tD2
Delay Time
Figure 1
TA = 25°C
35
45
nsec
0
°C ≤ TA ≤ 70°C
40
50
– 40
°C ≤ TA ≤ 85°C
—40
50
Power Supply
IS
Power Supply Current
VIN = 3V
0.5
1.0
mA
VIN = 0V
0.1
0.15
NOTE: 1. Switching times are guaranteed by design.
VDD = 16V
VDD = 16V
3A HIGH-SPEED MOSFET DRIVERS
TC1413
TC1413N


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