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BA779 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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BA779 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type www.kexin.com.cn 1 Diodes 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector 12 3 Unit: mm SOT-23 0.1+0.05 -0.01 Silicon PIN Diodes BA779;BA779S Features Wide frequency range 10 MHz to 1 GHz Absolute Maximum Ratings Ta = 25 Parameter Symbol Test Conditions Value Unit Reverse Voltage VR 30 V Forward Current IF 50 mA Junction Temperature Tj 125 Storage temperature range Tstg -55to+125 Junction ambient RthJA on PC board 50mm 50mm 1.6mm 500 K/W Electrical Characteristics Ta = 25 Symbol Conditions Min Typ Max Unit VF IF =20mA 1 V IR VR = 30 V 50 nA CD f= 100MHz,VR =0 0.5 pF rf f = 100 MHz, IF =1.5 mA 50 BA799 5 BA799S 9 ôIF =10mA, IR =10mA 4 S f= 100MHz,VR =0 K Differential forward resistance Reverse impedance Minority carrier lifetime zr Parameter Forward Voltage Reverse Current Diode capacitance |
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