IL317L

ELECTRICAL CHARACTERISTICS DIE ON WAFER

(VI - Vo = 3.0V, IO = 40mA, TA=25

°C, unless otherwise noted, Imax and Pmax (Note 1)

CHARACTERISTIC

Symbol

TEST CONDITION

Min

Max

Unit

Reference Voltage

(TA= -10

°C to +125°C)

VO

3.0V

≤ VI-Vo ≤40V

10mA

≤ Io ≤ Imax, PD ≤ Pmax

1.2

1.3

V

Line Regulation (Note 2)

ΔVOV

3.0V

≤ VI-Vo ≤40V, Io=10mA

160

mV

Line Regulation (TA= -10

°C to

+125

°C), (Note 2)

ΔVOV

3.0V

≤ VI-Vo ≤40V, Io=10mA

180

mV

. Load Regulation, (Note 2)

ΔVOI

10mA

≤ Io ≤ Imax, VO = 5.0V

6.0

mV

Load Regulation (TA= -10

°C to

+125

°C), (Note 2)

ΔVOI

10mA

≤ Io ≤ Imax, VO = 5.0V

10

mV

Adjustment Pin Current

IAdj

10

100

µA

Adjustment Pin Current Change

ΔIAdj

3.0V

≤ VI-Vo ≤40V

10mA

≤ Io ≤ Imax, PD ≤ Pmax

5.0

µA

Maximum Output Current

IO MAX

VI-VO =3.0V, PD

≤ Pmax

VI-VO = 40V, PD

≤ Pmax

0.1

0.025

0.3

0.15

A

Minimum Load Current to Maintain

Regulation VO=1.2V, f=120Hz

IL MIN

VI-Vo

≤40V

10

mA

Ripple Rejection

RR

Vo = 1.2V, f= 120Hz

66

dB

Notes: 1. Imax=100mA, Pmax=625mW;

2. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating

effects must be taken into account separately. Pulse testing with low duty cycle is used.

Fig.1 Test Circuit for Vo

>1.25V

Fig.2 Test Circuit for Vo=1.25V

Сi=0,1

μF, Сo=1,0 μF.

Сi=0,1

μF, Сo=1,0 μF.

Rev. 00