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TP0604 Datasheet(PDF) 1 Page - Supertex, Inc

Part No. TP0604
Description  P-Channel Enhancement-Mode Vertical DMOS FETs
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Maker  SUTEX [Supertex, Inc]
Homepage  http://www.supertex.com
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TP0604 Datasheet(HTML) 1 Page - Supertex, Inc

   
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11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
SOW-20
TP0604
Low Threshold
Note 1:
See Package Outline section for dimensions.
Note 2:
See Array section for quad pinouts.
P-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
Features
❏ Low threshold — -2.4V max.
❏ High input impedance
❏ Low input capacitance — 95pF typical
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
❏ Complementary N- and P-channel devices
Applications
❏ Logic level interfaces – ideal for TTL and CMOS
❏ Solid state relays
❏ Battery operated systems
❏ Photo voltaic drives
❏ Analog switches
❏ General purpose line drivers
❏ Telecom switches
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
TO-92
S G D
BV
DGS
(max)
(min)
(max)
TO-92
SOW-20*
-40V
2.0Ω
-2.0A
-2.4V
TP0604N3
TP0604WG
* Same as SO-20 with 300 mil wide body.
BVDSS /RDS(ON)
ID(ON)
VGS(th)
Order Number / Package
Ordering Information
Absolute Maximum Ratings
Drain-to-Source Voltage
BVDSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
± 20V
Operating and Storage Temperature
-55°C to +150°C
Soldering Temperature*
300°C
* Distance of 1.6 mm from case for 10 seconds.


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