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TC2320 Datasheet(PDF) 1 Page - Supertex, Inc |
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TC2320 Datasheet(HTML) 1 Page - Supertex, Inc |
1 / 3 page 1 TC2320 04/23/02 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET Features ❑ Low threshold ❑ Low on resistance ❑ Independent, electrically isolated N- and P-channels ❑ Low input capacitance ❑ Fast switching speeds ❑ Free from secondary breakdowns ❑ Low input and output leakage Application ❑ Medical Ultrasound Transmitters ❑ High voltage pulsers ❑ Amplifiers ❑ Buffers ❑ Piezoelectric transducer drivers ❑ General purpose line drivers ❑ Logic level interfaces Low Threshold DMOS Technology The Supertex TC2320TG consist of a high voltage low threshold N- channel and P-channel MOSFET in an SO-8 package. These low threshold enhancement-mode (normally-off) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Absolute Maximum Ratings* Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ±20V Operating and Storage Temperature -55°C to +150°C Soldering Temperature* 300°C *Distance of 1.6mm from case for 10 seconds. V B S S D V B / S G D R ) N O ( S D ) x a m (e g a k c a P / r e b m u N r e d r O l e n n a h C - Nl e n n a h C - Pl e n n a h C - Nl e n n a h C - P8 - O S V 0 0 2V 0 0 2 -0 . 72 1G T 0 2 3 2 C T Package Option S1 G1 S2 G2 D2 D2 D1 D1 SO-8 Package (top view) N-Channel P-Channel 1 2 3 4 6 5 7 8 |
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