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TCMBR20150CT Datasheet(PDF) 1 Page - Tak Cheong Electronics (Holdings) Co.,Ltd |
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TCMBR20150CT Datasheet(HTML) 1 Page - Tak Cheong Electronics (Holdings) Co.,Ltd |
1 / 2 page May 2008 Release, Revision C Page 1 TAK CHEONG ® SEMICONDUCTOR 20A SCHOTTKY BARRIER DIODE Dual High Voltage Schottky Rectifier Specification Features: High Voltage Wide Range Selection, 100V, 150V & 200V High Switching Speed Device Low Forward Voltage Drop Low Power Loss and High Efficiency Guard Ring for Over-voltage Protection High Surge Capability RoHS Compliant Matte Tin(Sn) Lead Finish Terminal Leads Surface is Corrosion Resistant and can withstand to 260°C Wave Soldering or per MIL-STD-750, Method 2026. DEVICE MARKING DESIGNATION: Line 1 & 2 = Device Name Line 3 = Datecode Line 4 = Polarity MAXIMUM RATINGS (Per Leg, unless otherwise specified ) Symbol Parameter TCMBR20100CT TCMBR20150CT TCMBR20200CT Units VRRM VRWM VR Maximum Repetitive Reverse Voltage Working Peak Reverse Voltage Maximum DC Reverse Voltage 100 150 200 V IF(AV) Average Rectified Forward Current Per Leg Per Package 10 20 A IFSM Non-repetitive Peak Forward Surge Current 8.3mS Single Phase @ Rated Load 150 A TSTG Storage Temperature Range -65 to +175 °C TJ Operating Junction Temperature +175 °C These ratings are limiting values above which the serviceability of the diode may be impaired. THERMAL CHARACTERISTICS TA = 25°C unless otherwise noted Symbol Parameter Value Units RθJC Maximum Thermal Resistance, Junction-to-Case 2.0 °C/W ELECTRICAL CHARACTERISTICS (Per Diode ) TA = 25°C unless otherwise noted TCMBR20100CT TCMBR20150CT TCMBR20200CT Symbol Parameter Test Condition (Note 1) Min Max Min Max Min Max Units IR Reverse Current @ rated VR --- 200 --- 200 --- 200 µA VF Forward Voltage IF = 10A IF = 20A --- 0.800 0.900 --- 0.850 0.950 --- 0.900 1 V Note/s: 1. Tested under pulse condition of 300 µS. 1 2 3 TO-220AB 1. Anode 2. Cathode 3. Anode POLARITY CONFIGURATION |
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