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XD010-51S-D4FY Datasheet(PDF) 1 Page - SIRENZA MICRODEVICES |
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XD010-51S-D4FY Datasheet(HTML) 1 Page - SIRENZA MICRODEVICES |
1 / 5 page 1625-1675The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any thrid party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 S. Technology Court, Phone: (800) SMI-MMIC http://www.sirenza.com Broomfield, CO 80021 1 EDS-105061 Rev E Sirenza Microdevices’ XD010-51S-D4F 15W power module is a robust 2- stage Class A/AB amplifier module is a driver stage in many 900 MHz applications. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit operates from a single volt- age supply and has internal temperature compensation of the bias volt- age to ensure stable performance over the full temperature range. It is a drop-in, no-tune solution for medium power applications requiring high effi- ciency, excellent linearity, and unit-to-unit repeatability. It is internally matched to 50 ohms. Key Specifications Symbol Parameter Unit Min. Typ. Max. Frequency Frequency of Operation MHz 902 928 P1dB Output Power at 1dB Compression, 915MHz W 12.5 15 Gain Gain at 10W Output Power (CW) dB 30 32 Gain Flatness Peak to Peak Gain Variation at 10W (CW) dB 0.7 1.5 IRL Input Return Loss 10W CW dB 14 18 Efficiency Drain Efficiency at 10W CW % 25 30 Linearity 3rd Order IMD at 10W PEP (Two Tone), 1MHz Spacing dBc -35 -30 Delay Signal Delay from Pin 1 to Pin 4 nS 2.5 Phase Linearity Deviation from Linear Phase (Peak to Peak) Deg 0.5 RTH, j-l Thermal Resistance Stage 1 (Junction-to-Case) ºC/W 11 RTH, j-2 Thermal Resistance Stage 2 (Junction-to-Case) ºC/W 4 Functional Block Diagram XD010-51S-D4F 902-928 MHz Class A/AB 15W Power Amplifier Module Product Features Applications • Available in RoHS compliant packaging • 50 W RF impedance • 15W Output P 1dB • Single Supply Operation : Nominally 28V • High Gain: 32 dB at 915 MHz • High Efficiency: 30% at 915 MHz • Robust 8000V ESD (HBM), Class 3B • XeMOS II LDMOS FETS • Temperature Compensation • RFID • Point to Multipoint data radio systems Product Description Test Conditions Zin = Zout = 50Ω, VDD = 28.0V, IDQ1 = 230 mA, IDQ2 =158 mA, TFlange = 25ºC Bias Network Temperature Compensation VD2 D1 V RF out RF in Stage 2 Stage 1 1 23 4 Case Flange = Ground XD010-51S-D4FY Pb RoHS Compliant & Green Package |
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