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XD010-51S-D4FY Datasheet(PDF) 1 Page - SIRENZA MICRODEVICES

Part # XD010-51S-D4FY
Description  902-928 MHz Class A/AB 15W Power Amplifier Module
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Manufacturer  SIRENZA [SIRENZA MICRODEVICES]
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XD010-51S-D4FY Datasheet(HTML) 1 Page - SIRENZA MICRODEVICES

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1625-1675The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and
all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any thrid party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1
EDS-105061 Rev E
Sirenza Microdevices’ XD010-51S-D4F 15W power module is a robust 2-
stage Class A/AB amplifier module is a driver stage in many 900 MHz
applications. The power transistors are fabricated using Sirenza's latest,
high performance LDMOS process. This unit operates from a single volt-
age
supply and has internal temperature compensation of the bias volt-
age to ensure stable performance over the full temperature range. It is a
drop-in, no-tune solution for medium power applications requiring high effi-
ciency, excellent linearity, and unit-to-unit repeatability. It is internally
matched to 50 ohms.
Key Specifications
Symbol
Parameter
Unit
Min.
Typ.
Max.
Frequency
Frequency of Operation
MHz
902
928
P1dB
Output Power at 1dB Compression, 915MHz
W
12.5
15
Gain
Gain at 10W Output Power (CW)
dB
30
32
Gain Flatness
Peak to Peak Gain Variation at 10W (CW)
dB
0.7
1.5
IRL
Input Return Loss 10W CW
dB
14
18
Efficiency
Drain Efficiency at 10W CW
%
25
30
Linearity
3rd Order IMD at 10W PEP (Two Tone), 1MHz Spacing
dBc
-35
-30
Delay
Signal Delay from Pin 1 to Pin 4
nS
2.5
Phase Linearity
Deviation from Linear Phase (Peak to Peak)
Deg
0.5
RTH, j-l
Thermal Resistance Stage 1 (Junction-to-Case)
ºC/W
11
RTH, j-2
Thermal Resistance Stage 2 (Junction-to-Case)
ºC/W
4
Functional Block Diagram
XD010-51S-D4F
902-928 MHz Class A/AB
15W Power Amplifier Module
Product Features
Applications
Available in RoHS compliant packaging
50 W RF impedance
15W Output P
1dB
Single Supply Operation : Nominally 28V
High Gain: 32 dB at 915 MHz
High Efficiency: 30% at 915 MHz
Robust 8000V ESD (HBM), Class 3B
XeMOS II LDMOS FETS
Temperature Compensation
RFID
Point to Multipoint data radio systems
Product Description
Test Conditions Zin = Zout = 50Ω, VDD = 28.0V, IDQ1 = 230 mA, IDQ2 =158 mA, TFlange = 25ºC
Bias
Network
Temperature
Compensation
VD2
D1
V
RF out
RF in
Stage 2
Stage 1
1
23
4
Case Flange = Ground
XD010-51S-D4FY Pb
RoHS Compliant
& Green Package


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