HSMS-282E-TR1G datasheet(4/15 Pages) AVAGO

Part #	HSMS-282E-TR1G

Description	Surface Mount RF Schottky Barrier

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Manufacturer	AVAGO [AVAGO TECHNOLOGIES LIMITED]

Direct Link	http://www.avagotech.com

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4

Typical Performance, T

C = 25°C (unless otherwise noted), Single Diode

Figure 1. Forward Current vs. Forward Voltage at

Temperatures.

0

0.10

0.20

0.30

0.50

0.40

VF – FORWARD VOLTAGE (V)

0.01

10

1

0.1

100

TA = +125C

TA = +75C

TA = +25C

TA = –25C

Figure 2. Reverse Current vs. Reverse Voltage at

Temperatures.

0

5

15

VR – REVERSE VOLTAGE (V)

10

1

1000

100

10

100,000

10,000

TA = +125C

TA = +75C

TA = +25C

Figure 3. Total Capacitance vs. Reverse Voltage.

0

2

8

6

VR – REVERSE VOLTAGE (V)

4

0

0.6

0.4

0.2

1

0.8

Figure 4. Dynamic Resistance vs. Forward

Current.

0.1

1

100

IF – FORWARD CURRENT (mA)

10

1

10

1000

100

VF - FORWARD VOLTAGE (V)

Figure 5. Typical Vf Match, Series Pairs and Quads

at Mixer Bias Levels.

30

10

1

0.3

30

10

1

0.3

0.2

0.4

0.6

0.8

1.0

1.2

1.4

IF (Left Scale)

VF (Right Scale)

VF - FORWARD VOLTAGE (V)

Figure 6. Typical Vf Match, Series Pairs at Detector

Bias Levels.

100

10

1

1.0

0.1

0.10

0.15

0.20

0.25

IF (Left Scale)

VF (Right Scale)

Figure 7. Typical Output Voltage vs. Input Power,

Small Signal Detector Operating at 850 MHz.

-40

-30

18 nH

RF in

3.3 nH

100 pF

100 K

HSMS-282B Vo

0

Pin – INPUT POWER (dBm)

-10

-20

0.001

0.01

1

0.1

-25C

+25C

+75C

DC bias = 3 A

Figure 8. Typical Output Voltage vs. Input Power,

Large Signal Detector Operating at 915 MHz.

-20

-10

RF in

100 pF

4.7 K

68

HSMS-282B

Vo

30

Pin – INPUT POWER (dBm)

10

20

0

1E-005

0.0001

0.001

10

0.1

1

0.01

+25C

LOCAL OSCILLATOR POWER (dBm)

Figure 9. Typical Conversion Loss vs. L.O. Drive,

2.0 GHz (Ref AN997).

12

10

9

8

7

6

2

0

6

8

10

4

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HSMS-282E-TR1G Datasheet(PDF) 4 Page - AVAGO TECHNOLOGIES LIMITED

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