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RH1028MW Datasheet(PDF) 1 Page - Linear Technology |
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RH1028MW Datasheet(HTML) 1 Page - Linear Technology |
1 / 2 page DICE/DWF SPECIFICATION 1 RH1028M/RH1128M Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa- tion that the interconnection of its circuits as described herein will not infringe on existing patent rights. L, LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. PAD FUNCTION 1. 2. 3. 4. 5. 6. 7. 8. VOS TRIM –IN +IN V– OVER-COMP OUT V+ VOS TRIM 114mils × 81mils, Backside (substrate) metal: Alloyed gold layer Backside potential: Connect to V– 1 3 2 6 7 8 DIE CROSS REFERENCE LTC Finished Part Number Order Part Number RH1028MW RH1028MW RH1028 DICE RH1028 DWF* RH1128MW RH1128MW RH1128 DICE RH1128 DWF* Please refer to LTC standard product data sheet for other applicable product information. *DWF = DICE in wafer form. Ultralow Noise Precision High Speed Op Amps DICE/DWF ELECTRICAL TEST LIMITS VS = ±15V, TA = 25°C, VCM = 0V, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN MAX UNITS VOS Input Offset Voltage (Note 1) 300 μV IOS Input Offset Current VCM = 0V 150 nA IB Input Bias Current VCM = 0V ±400 nA VIN Input Voltage Range ±11 V CMRR Common Mode Rejection Ratio VCM = ±11V VCM = ±10.3V 110 dB PSRR Power Supply Rejection Ratio VS = ±4V to ±16V VS = ±4.5V to ±16V 110 dB AVOL Large Scale Voltage Gain RL ≥ 2k, VO = ±10V RL ≥ 1k, VO = ±10V RL ≥ 600Ω, VO = ±10V 5 3.5 2 V/μV V/μV V/μV VOUT Maximum Output Voltage Swing RL ≥ 2k RL ≥ 600Ω ±12 ±10.5 V V 4 5 X = 0 for LT1028B, 1 for LT1128B |
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