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RH1034-1.2 Datasheet(PDF) 2 Page - Linear Technology

Part # RH1034-1.2
Description  Micropower Dual Reference
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Manufacturer  LINER [Linear Technology]
Direct Link  http://www.linear.com
Logo LINER - Linear Technology

RH1034-1.2 Datasheet(HTML) 2 Page - Linear Technology

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RH1034-1.2
2
TABLE 1: ELECTRICAL CHARACTERISTICS (Preirradiation)
SYMBOL PARAMETER
CONDITIONS
NOTES MIN
TYP
MAX
SUB-
GROUP
MIN
TYP
MAX
SUB-
GROUP
UNITS
1.2V Reference
VZ
Reverse Breakdown Voltage IR = 100μA
1.210
1.240
1
1.195
1.255
2, 3
V
ΔVZ
ΔIR
Reverse Breakdown Voltage
Change with Current
20μA ≤ IR ≤ 2mA
2mA ≤ IR ≤ 20mA
2.0
8.0
1
1
4.0
15.0
2, 3
2, 3
mV
mV
Minimum Operating Current
20
1
30
2, 3
μA
Temperature Coefficient
IR = 100μA
60
1
60
2, 3
ppm/°C
rz
Reverse Dynamic
Impedance
IR = 100μA
3
1.0
1
2.0
2, 3
Ω
Low Frequency Noise
IR = 100μA, 0.1Hz ≤ f ≤ 10Hz
4
μVP-P
Long-Term Stability
IR = 100μA
20
ppm/√kHrs
7V Reference
VZ
Reverse Breakdown Voltage IR = 100μA
6.70
7.30
1
6.60
7.40
2, 3
V
ΔVZ
ΔIR
Reverse Breakdown Voltage
Change with Current
100μA ≤ IR ≤ 1mA
1mA ≤ IR ≤ 20mA
140
250
1
1
190
350
2, 3
2, 3
mV
mV
Temperature Coefficient
IR = 100μA
60
ppm/°C
Long-Term Stability
IR = 100μA
20
ppm/√kHrs
TA = 25°C
–55°C ≤ TA ≤ 125°C
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
TABLE 2: ELECTRICAL CHARACTERISTICS (Postirradiation) T
A = 25°C.
SYMBOL PARAMETER
CONDTIONS
NOTES MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
1.2V Reference
VZ
Reverse Breakdown
Voltage
IR = 100μA
1.202 1.248 1.197 1.253 1.187 1.263 1.172 1.278 1.142 1.308
V
ΔVZ
ΔIR
Reverse Breakdown
Voltage Change with
Current
20μA ≤ IR ≤ 2mA
2mA ≤ IR ≤ 20mA
2.8
8.8
3.2
9.7
4.0
11.2
5.0
14.5
7.5
22.5
mV
mV
rz
Reverse Dynamic
Impedance
IR = 100μA
3
1.4
1.6
2.0
2.5
3.75
Ω
7V Reference
VZ
Reverse Breakdown
Voltage
IR = 100μA
6.796 7.304 6.796 7.304 6.796 7.304 6.791 7.309 6.786 7.314
V
ΔVZ
ΔIR
Reverse Breakdown
Voltage Change with
Current
100μA ≤ IR ≤ 1mA
1mA ≤ IR ≤ 20mA
150
275
150
275
150
275
150
275
150
275
mV
mV
10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si)
Note 2: Forward biasing either diode will affect the operation of the other
diode.
Note 3: This parameter guaranteed by “reverse breakdown voltage change
with current” test.


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