©2002 Fairchild Semiconductor Corporation

RFG45N06, RFP45N06, RF1S45N06SM Rev. B

PSPICE Electrical Model

.SUBCKT RFP45N06213

REV 1/18/93

CA 12 8 3.49E-9

CB 15 14 3.8E-9

CIN 6 8 2E-9

DBODY 7 5 DBDMOD

DBREAK 5 11DBKMOD

DPLCAP 10 5 DPLCAPMOD

EBREAK 11 7 17 18 66.5

EDS 14 8 5 8 1

EGS 13 8 6 8 1

ESG 6 10 6 8 1

EVTO 20 6 18 8 1

IT 8 17 1

LDRAIN 2 5 1E-9

LGATE 1 9 5.65E-9

LSOURCE 3 7 4.13E-9

MOS1 16 6 8 8 MOSMOD M=0.99

MOS2 16 21 8 8 MOSMOD M=0.01

RBREAK 17 18 RBKMOD 1

RDRAIN 5 16 RDSMOD 3.58E-3

RGATE 9 20 0.681

RIN 6 8 1E9

RSOURCE 8 7 RDSMOD 13.6E-3

RVTO 18 19 RVTOMOD 1

S1A 6 12 13 8 S1AMOD

S1B 13 12 13 8 S1BMOD

S2A 6 15 14 13 S2AMOD

S2B 13 15 14 13 S2BMOD

VBAT 8 19 DC 1

VTO 21 6 0.92

.MODEL DBDMOD D (IS=8.2E-13 RS=7.86E-3 TRS1=2.26E-3 TRS2=2.90E-6 CJO=2.07E-9 TT=5.72E-8)

.MODEL DBKMOD D (RS=1.93E-1 TRS1=5.13E-4 TRS2=-2.15E-5)

.MODEL DPLCAPMOD D (CJO=1.25E-9 IS=1E-30 N=10)

.MODEL MOSMOD NMOS (VTO=3.862 KP=55.57 IS=1E-30 N=10 TOX=1 L=1U W=1U)

.MODEL RBKMOD RES (TC1=1.12E-3 TC2=-5.18E-7)

.MODEL RDSMOD RES (TC1=4.64E-3 TC2=1.58E-5)

.MODEL RVTOMOD RES (TC1=-4.27E-3 TC2=-6.55E-6)

.MODEL S1AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-6.5 VOFF=-1.7)

.MODEL S1BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-1.7 VOFF=-6.5)

.MODEL S2AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-3.0 VOFF=2)

.MODEL S2BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=2.0 VOFF=-3.0)

.ENDS

NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature

Options; authors, William J. Hepp and C. Frank Wheatley.

10

DPLCAP

RDRAIN

DBREAK

LDRAIN

DRAIN

SOURCE

LSOURCE

DBODY

RBREAK

RVTO

VBAT

+

-

19

IT

RSOURCE

EBREAK

MOS2

EDS

EGS

RIN

CIN

VTO

ESG

S1A

S2A

S2B

S1B

CB

CA

EVTO

RGATE

GATE

LGATE

5

2

18

17

7

11

21

8

6

16

20

9

1

12

15

14

13

13

8

14

13

+

-

+

-

+

-

-

+

-

-

MOS1

3

6

8

5

8

18

8

6

8

17

18

RFG45N06, RFP45N06, RF1S45N06SM