PRODUCT SELECTION GUIDE

PARAMETER

WS27C256L-12

WS27C256L-15

WS27C256L-20

Address Access Time (Max)

120 ns

150 ns

200 ns

Chip Select Time (Max)

120 ns

150 ns

200 ns

Output Enable Time (Max)

35 ns

40 ns

40 ns

WS27C256L

TOP VIEW

Chip Carrier

CERDIP

PIN CONFIGURATION

4-19

Military 32K x 8 CMOS EPROM

KEY FEATURES

— 120 ns Access Time

— Latch-Up Immunity to 200 mA

— ESD Protection Exceeds 2000 Volts

GENERAL DESCRIPTION

The WS27C256L is a performance oriented 256K UV Erasable Electrically Programmable Read Only Memory

organized as 32K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to

operate at speeds up to 120 nsecs. The memory was designed utilizing WSI's patented self-aligned split gate

EPROM cell, resulting in a low power device with a very cost effective die size.

The WS27C256L 256K EPROM provides 32K of 8 bit wide code store capacity for DSP, microprocessor, and

microcontroller-based systems. Its 120 nsec access time over the full Military temperature range provides the

potential of no-wait state operation. And where this parameter is important, the WS27C256L provides the user with

The WS27C256L is offered in a 28 pin 300 mil skinny CERDIP or the standard 600 mil CERDIP, and also in a

32 pad Ceramic Leadless Chip Carrier (CLLCC) for surface mount applications. All packages incorporate the

standard JEDEC EPROM pinout.

NC

OE

CE/PGM

NC

1

43

2

32 31 30

29

28

27

26

25

24

23

22

21

5

6

7

8

9

10

11

12

13

14 15 16 17 18 19 20

A14

A13

A8

A9

A11

OE

A10

CE/PGM

GND

1

2

3

4

5

6

7

8

9

10

11

12

13

14

28

27

26

25

24

23

22

21

20

19

18

17

16

15

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