FMP3217BA0(7)

CMOS LPRAM

Revision 0.2

Feb. 2007

3

PRODUCT LIST

48-FBGA, 60ns, VCC=3.0V, VCCQ=3.0V(2.5V,1.8V)

48-FBGA, 70ns, VCC=3.0V, VCCQ=3.0V(2.5V,1.8V)

Function

Part Name

’C

-65 to 150

Storage temperature

W

1.0

Power Dissipation

V

-0.2 to 3.6

Vcc

Voltage on Vcc supply relative to Vss

V

-0.2 to Vcc+0.3V

Voltage on any pin relative to Vss

Unit

Ratings

Symbol

Item

1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Functional operation should be restricted to

recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

RECOMMENDED DC OPERATING CONDITIONS

0.8VCCQ

0

2.7

2.7

Min

FMP3217BA

0.2VCCQ

)

0

3.3

3.3

Max

0.8VCCQ

0

2.25

2.7

Min

0.2VCCQ

0

2.75

3.3

Max

1.95

V

3.3

2.7

Supply voltage

0.2VCCQ

0

Max

V

Input low voltage

V

0.8VCCQ

Input high voltage

V

0

Ground

V

1.65

I/O operating voltage (VCCQ ≤ VCC)

Unit

Min

Symbol

Item

Note :

1. Overshoot : Vcc+1.0V in case of pulse width≤20ns.

2. Undershoot : -1.0V in case of pulse width≤20ns.

3. Overshoot and undershoot are sampled, not 100% tested.

FUNCTIONAL DESCRIPTION

1. X means don’t care.(Must be low or high state)

Active

Word Write

Din

Din

L

L

Active

Upper Byte Write

Din

High-Z

L

H

Active

Lower Byte Write

High-Z

Din

H

L

L

Active

Word Read

Dout

Dout

L

L

Active

Upper Byte Read

Dout

High-Z

L

H

Active

Lower Byte Read

High-Z

Dout

H

L

H

L

H

L

Active

Output Disabled

High-Z

High-Z

L

H

H

H

Active

Output Disabled

High-Z

High-Z

L

H

H

H

L

Standby

Deselect/Power-down

High-Z

High-Z

H

H

H

Standby

Deselect/Power-down

High-Z

High-Z

L

Standby

Deselect/Power-down

High-Z

High-Z

H

H

Power

Mode

I/O9-16

I/O1-8

/UB

/LB

/WE

/OE

CS2

/CS1