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VNQ810M Datasheet(PDF) 1 Page - STMicroelectronics

Part No. VNQ810M
Description  QUAD CHANNEL HIGH SIDE DRIVER
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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VNQ810M Datasheet(HTML) 1 Page - STMicroelectronics

 
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M
®
July 2004
1/21
VNQ810M
QUAD CHANNEL HIGH SIDE DRIVER
s
CMOS COMPATIBLE INPUTS
s
OPEN DRAIN STATUS OUTPUTS
s
ON STATE OPEN LOAD DETECTION
s
OFF STATE OPEN LOAD DETECTION
s
SHORTED LOAD PROTECTION
s
UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
s
PROTECTION AGAINST LOSS OF GROUND
s
VERY LOW STAND-BY CURRENT
s
REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The VNQ810M is a quad HSD formed by
assembling two VND810M chips in the same SO-
28 package. The VND810M is a monolithic device
made by using STMicroelectronics VIPower M0-3
Technology, intended for driving any kind of load
with one side connected to ground.
Active VCC pin voltage clamp protects the device
against low energy spikes (see ISO7637 transient
compatibility
table).
Active
current
limitation
combined with thermal shutdown and automatic
restart protects the device against overload. The
current limitation threshold is aimed at detecting
the 21W/12V standard bulb as an overload fault.
The device detects open load condition both in on
and off state . Output shorted to VCC is detected
in the off state. Device automatically turns off in
case of ground pin disconnection.
TYPE
RDS(on)
IOUT
VCC
VNQ810M
150 m
Ω (*)
0.6 A (*)
36 V
SO-28 (DOUBLE ISLAND)
ORDER CODES
PACKAGE
TUBE
T&R
SO-28
VNQ810M
VNQ810M13TR
(*) Per each channel
ABSOLUTE MAXIMUM RATING
(**) See application schematic at page 9
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage
41
V
- VCC
Reverse DC Supply Voltage
-0.3
V
- Ignd
DC Reverse Ground Pin Current
-200
mA
IOUT
DC Output Current
Internally Limited
A
- IOUT
Reverse DC Output Current
-6
A
IIN
DC Input Current
+/- 10
mA
ISTAT
DC Status Current
+/- 10
mA
VESD
Electrostatic Discharge (Human Body Model: R=1.5K
Ω; C=100pF)
- INPUT
- STATUS
- OUTPUT
- VCC
4000
4000
5000
5000
V
V
V
V
EMAX
Maximum Switching Energy
(L=310mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=0.9A)
174
mJ
Ptot
Power dissipation (per island) at Tlead=25°C
6.25
W
Tj
Junction Operating Temperature
Internally Limited
°C
Tstg
Storage Temperature
-55 to 150
°C
Rev. 1


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