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2SB1386 Datasheet(PDF) 1 Page - Rohm |
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2SB1386 Datasheet(HTML) 1 Page - Rohm |
1 / 5 page 2SB1386 / 2SB1412 Transistors Rev.B 1/4 Low frequency transistor ( −20V, −5A) 2SB1386 / 2SB1412 Features 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118. Structure Epitaxial planar type PNP silicon transistor Dimensions (Unit : mm) Absolute maximum ratings (Ta=25 °C) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗1 Single pulse, Pw=10ms ∗2 When mounted on a 40×40×0.7 mm ceramic board. Parameter VCBO VCEO VEBO PC Tj Tstg −30 V V V A(DC) °C °C −20 −6 −5 IC A(Pulse) −10 ∗1 ∗2 0.5 2W W W 1 10 W(Tc =25 °C) 2SB1386 2SB1412 150 −55 to 150 Symbol Limits Unit (1) Base (2) Collector (3) Emitter ROHM : CPT3 EIAJ : SC-63 2SB1386 2SB1412 (1) Base (2) Collector (3) Emitter ROHM : MPT3 EIAJ : SC-62 ∗ Denotes hFE Abbreviated symbol: BH ∗ |
Similar Part No. - 2SB1386_1 |
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Similar Description - 2SB1386_1 |
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