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VN771P Datasheet(PDF) 5 Page - STMicroelectronics |
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VN771P Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 11 page  ABSOLUTE MAXIMUM RATING (-40 oC< Tj < 150 oC) HIGH SIDE SWITCH Symbol Parameter Value Uni t V(BR)DSS Drain-Source Breakdown Voltage 40 V IOUT Output Current (cont .) 14 A IR Reverse Out put Current -14 A IIN Input Current ±10 mA -VCC Reverse Supply Voltage -4 V ISTAT St atus Current ±10 mA VESD Elect rostatic Discharge (C = 100 pF, R =1.5 K Ω) 2000 V Ptot Power Dissipation at Tc =25 oC Internally Limited W Tj Junct ion Operat ing Temperat ure -40 t o 150 oC Tstg St orage Temperature -55 t o 150 oC LOW SIDE SWITCH Symbol Parameter Value Unit V(BR)DSS Drain-Source Breakdown Voltage I nternally Clamped V VIN Input Volt age 18 V ID Drain Current Int ernally Limited A IR Reverse DC Out put Current -28 A VESD Elect rostatic Discharge (C = 100 pF, R =1.5 K Ω)2000 V Ptot Tot al Dissipation at Tc =25 oC Int ernally Limited W Tj Operat ing Junction Temperature Int ernally Limited o C Tstg Storage Temperature -55 t o 150 o C THERMAL DATA Rthj-ca se Rthj-ca se Rthj-amb Thermal Resistance Junction-case (High-side swit ch) Max Thermal Resistance Junction-case (Low-side switch) Max Thermal Resistance Junction-ambient Max 20 20 60 oC/W oC/W oC/W ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (8 < VCC < 16 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified) POWER Symbol Parameter Test Co ndi tio ns Min. Typ . Max. Uni t VCC Supply Voltage 6 13 26 V I n(*) Nominal Current Tc =85 oCVDS(on) ≤ 0.5 VCC =13 V 3.4 5.2 A Ron On St ate Resistance IOUT =In VCC =13 V Tj =25 oC0.065 0.1 Ω IS Supply Current Of f State Tj =25 oCVCC = 13 V 35 100 µA VDS(MAX) Maximum Volt age Drop IOUT =13 A Tj =85 oCVCC =13 V 1.2 2 V Ri Output to GND internal Im pedance Tj =25 oC5 10 20 K Ω VN771P 5/11 |
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