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VN771 Datasheet(PDF) 8 Page - STMicroelectronics |
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VN771 Datasheet(HTML) 8 Page - STMicroelectronics |
8 / 10 page TYPICAL APPLICATION DIAGRAM SOURCE-DRAIN DIODE Symbo l Parameter Test Con ditio ns Min . Typ . Max. Uni t ISD ISDM ( ∗∗) Source-Drain Current Source-Drain Current (pulsed) 36 144 A A VSD ( ∗) Forward O n Voltage ISD =36 A VGS =0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =36 A, di/dt = 100 A/ µs Vr =30 V Tj =150 oC 75 245 6.5 ns nC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( ∗∗) Pulse width limited by Safe Operating Area. ELECTRICAL CHARACTERISTICS FOR DUAL LOW SIDE SWITCH (continued) VN771 8/10 |
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