NTLJS1102PTAG datasheet(5/7 Pages) ONSEMI

Part #	NTLJS1102PTAG

Description	Power MOSFET ?? V, ??.1 A, COOL Single P?묬hannel, 2x2 mm, WDFN package

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NTLJS1102P

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TYPICAL CHARACTERISTICS

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

QG, TOTAL GATE CHARGE (nC)

7

6

5

4

3

2

1

0

200

400

1000

1400

1600

2000

2400

14

12

10

8

6

4

2

0

1

2

3

4

5

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

−VSD, SOURCE−TO−DRAIN VOLTAGE (V)

100

10

1

10

100

1000

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

1

10

Figure 11. Threshold Voltage

Figure 12. Single Pulse Maximum Power

Dissipation

TJ, TEMPERATURE (°C)

SINGLE PULSE TIME (s)

125

100

75

50

25

0

−25

−50

0

0.1

0.2

0.3

0.4

0.6

0.7

0.8

1E+00

1E−01

1E−02

1E−03

0

10

20

30

40

50

600

800

1200

1800

2200 Ciss

Coss

Crss

VGS = 0 V

TJ = 25°C

f = 1 MHz

16

QT

QGS

QGD

−VGS

−VDS

VDS = −4 V

ID = −6.2 A

TJ = 25°C

0

1

2

3

4

5

VGS = −4.5 V

VDD = −4 V

ID = −6.2 A

td(off)

td(on)

tf

tr

1.0

TJ = 25°C

TJ = 125°C

TJ = −55°C

TJ = 150°C

150

0.5

ID = −250 mA

1E+01

1E+02 1E+03

8

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