NSS1C201MZ4T3G datasheet(1/6 Pages) ONSEMI

Part #	NSS1C201MZ4T3G

Description	100 V, 2.0 A, Low VCE(sat) NPN Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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November, 2008 − Rev. 0

1

Publication Order Number:

NSS1C201MZ4/D

NSS1C201MZ4

100 V, 2.0 A, Low VCE(sat)

NPN Transistor

ON Semiconductor’s e2PowerEdge family of low VCE(sat)

transistors are miniature surface mount devices featuring ultra low

saturation voltage (VCE(sat)) and high current gain capability. These

are designed for use in low voltage, high speed switching applications

where affordable efficient energy control is important.

Typical applications are DC−DC converters and power management

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e2PowerEdge devices to be

driven directly from PMU’s control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

Feature

• These are Pb−Free Devices

MAXIMUM RATINGS (TA = 25°C)

Rating

Symbol

Max

Unit

Collector-Emitter Voltage

VCEO

100

Vdc

Collector-Base Voltage

VCBO

140

Vdc

Emitter-Base Voltage

VEBO

7.0

Vdc

Collector Current − Continuous

IC

2.0

A

Collector Current − Peak

ICM

3.0

A

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

TA = 25°C

Derate above 25°C

PD (Note 1)

800

6.5

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA (Note 1)

155

°C/W

Total Device Dissipation

TA = 25°C

Derate above 25°C

PD (Note 2)

2

15.6

W

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA (Note 2)

64

°C/W

Total Device Dissipation

(Single Pulse < 10 sec.)

PDsingle

(Note 3)

710

mW

Junction and Storage

Temperature Range

TJ, Tstg

−55 to

+150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ 7.6 mm2, 1 oz. copper traces.

2. FR−4 @ 645 mm2, 1 oz. copper traces.

3. Thermal response.

COLLECTOR

3

1

BASE

2

EMITTER

http://onsemi.com

100 VOLTS, 2.0 AMPS

NPN LOW VCE(sat) TRANSISTOR

Device

Package

Shipping†

ORDERING INFORMATION

NSS1C201MZ4T1G

SOT−223

(Pb−Free)

1000/

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

SOT−223

CASE 318E

STYLE 1

MARKING

DIAGRAM

Top View Pinout

C

CE

B

4

12

3

1

1C201G

AYW

A

= Assembly Location

Y

= Year

W

= Work Week

1C201 = Specific Device Code

G

= Pb−Free Package

NSS1C201MZ4T3G

SOT−223

(Pb−Free)

4000/

Tape & Reel

PIN ASSIGNMENT

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