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NCV8674DS120G Datasheet(PDF) 2 Page - ON Semiconductor

Part # NCV8674DS120G
Description  Very Low Iq Low Dropout Linear Regulator
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCV8674DS120G Datasheet(HTML) 2 Page - ON Semiconductor

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NCV8674
http://onsemi.com
2
VIN
Bias Current
Generators
1.3 V
Reference
+
-
Error
Amp
Thermal
Shutdown
VOUT
GND
Figure 1. Block Diagram
PIN FUNCTION DESCRIPTION
Pin No.
Symbol
Function
1
VIN
Unregulated input voltage; (VOUT + 0.5 V) to 45 V.
2
GND
Ground; substrate.
3
VOUT
Regulated output voltage; collector of the internal PNP pass transistor.
TAB
GND
Ground; substrate and best thermal connection to the die.
OPERATING RANGE
Pin Symbol, Parameter
Symbol
Min
Max
Unit
VIN, DC Input Operating Voltage
VIN
VOUT + 0.5 V
+45
V
Junction Temperature Operating Range
TJ
−40
+150
_C
MAXIMUM RATINGS
Rating
Symbol
Min
Max
Unit
VIN, DC Voltage
VIN
−42
+45
V
VOUT, DC Voltage
VOUT
−0.3
+16
V
Storage Temperature
Tstg
−55
+150
_C
ESD Capability, Human Body Model (Note 1)
VESDHB
4000
V
ESD Capability, Machine Model (Note 1)
VESDMIM
200
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series incorporates ESD protection and is tested by the following methods:
ESD HBM tested per AEC−Q100−002 (EIA/JESD22−A 114C)
ESD MM tested per AEC−Q100−003 (EIA/JESD22−A 115C)
Thermal Resistance
Parameter
Symbol
Min
Max
Unit
Junction−to−Ambient(Note 2)
RqJA
40
°C/W
Junction−to−Case
RqJC
4.0
°C/W
2. 1 oz., 1 in2 copper area.


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