EDS-101102 Rev OBS

1

Preliminary

Product Description

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.sirenza.com

The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of

this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are

implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..

All worldwide rights reserved.

0

5

10

15

20

25

0

1

2

3

4

56

78

NGA-286

DC-6000 MHz, Cascadable GaAs

HBT MMIC Amplifier

Product Features

Applications

dB

Small Signal Gain vs. Frequency

Sirenza Microdevices’ NGA-286 is a high performance Gallium

Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. De-

signed with InGaP process technology for improved reliability, a

Darlington configuration is utilized for broadband performance up

to 6 Ghz. The heterojunction increases breakdown voltage and

minimizes leakage current between junctions. Cancellation of

emitter junction non-linearities results in higher suppression of

intermodulation products.

Frequency GHz

l

o

b

m

y

S

r

e

t

e

m

a

r

a

P

s

t

i

n

U

y

c

n

e

u

q

e

r

F

.

n

i

M

.

p

y

T

.

x

a

M

P

B

d

1

n

o

i

s

s

e

r

p

m

o

C

B

d

1

t

a

r

e

w

o

P

t

u

p

t

u

Om

B

d

z

H

M

0

5

8

z

H

M

0

5

9

1

z

H

M

0

0

4

2

2

.

5

1

2

.

5

1

5

.

5

1

P

I

O

3

t

n

i

o

P

t

p

e

c

r

e

t

n

I

r

e

d

r

O

d

ri

h

T

t

u

p

t

u

Om

B

d

z

H

M

0

5

8

z

H

M

0

5

9

1

z

H

M

0

0

4

2

0

.

2

3

4

.

1

3

9

.

0

3

Gn

i

a

G

l

a

n

g

i

S

ll

a

m

SB

d

z

H

M

0

5

8

z

H

M

0

5

9

1

z

H

M

0

0

4

2

6

.

5

1

8

.

4

1

4

.

4

1

h

t

d

i

w

d

n

a

B

)

B

d

0

1

>

(

s

s

o

L

n

r

u

t

e

R

y

b

d

e

n

i

m

r

e

t

e

Dz

H

M0

0

8

3

R

W

S

V

t

u

p

n

I-

z

H

M

0

0

0

5

-

C

D1

:

3

.

1

R

W

S

V

t

u

p

t

u

O-

z

H

M

0

0

0

5

-

C

D1

:

3

.

1

F

Ne

r

u

g

i

F

e

s

i

o

NB

dz

H

M

0

0

0

24

.

3

V

D

e

g

a

tl

o

V

g

n

it

a

r

e

p

O

e

c

i

v

e

DV

0

.

4

I

D

t

n

e

r

r

u

C

g

n

it

a

r

e

p

O

e

c

i

v

e

DA

m5

40

55

5

R

H

T

l

-j

,

)

d

a

e

l

o

t

n

o

it

c

n

u

j

(

e

c

n

a

t

s

i

s

e

R

l

a

m

r

e

h

TW

/

C

°0

2

1

Test Conditions:

V

I

OIP

R

T

Z

See Application Note AN-059 for Alternates

OBSOLETE