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TYNX40-1 Datasheet(PDF) 3 Page - STMicroelectronics |
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TYNX40-1 Datasheet(HTML) 3 Page - STMicroelectronics |
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TYNx40 Series 3/4 Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2: Average and DC on-state current versus case temperature. Fig. 3: Relative variation of thermal impedance versus pulse duration. Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature. Fig. 5: Surge peak on-state current versus number of cycles. Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t. 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 P(W) α = 180° IT(av)(A) 360° α 0 25 50 75 100 125 0 10 20 30 40 50 IT(av)(A) D.C. α = 180° Tcase(°C) 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.01 0.10 1.00 K = [Zth/Rth] Zth(j-c) Zth(j-a) tp(s) -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 IGT,IH,IL [Tj] / IGT,IH,IL [Tj = 25 °C] IGT IH & IL Tj(°C) 1 10 100 1000 0 50 100 150 200 250 300 350 400 450 500 ITSM(A) Non repetitive Tj initial = 25 °C Repetitive Tcase = 95 °C Number of cycles One cycle tp = 10ms 0.01 0.10 1.00 10.00 100 1000 5000 ITSM(A),I 2t(A2s) Tj initial = 25 °C ITSM I2t dI/dt limitattion tp(ms) |
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