PSMN5R0-30YL

N-channel TrenchMOS logic level FET

Rev. 01 — 10 September 2008

Preliminary data sheet

1.

Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

industrial and communications applications.

1.2 Features and benefits

High efficiency due to low switching

and conduction losses

Suitable for logic level gate drive

sources

1.3 Applications

Class-D amplifiers

DC-to-DC converters

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

-

-

30

V

drain current

see Figure 1

--84

A

total power

dissipation

--61

W

Dynamic characteristics

gate-drain charge

see Figure 15

-3.8

-nC

Static characteristics

drain-source

on-state resistance

-3.6

5

m

Ω