Electronic Components Datasheet Search |
|
PSMN2R0-30YL Datasheet(PDF) 6 Page - NXP Semiconductors |
|
PSMN2R0-30YL Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 13 page PSMN2R0-30YL_1 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 01 — 10 September 2008 6 of 13 NXP Semiconductors PSMN2R0-30YL N-channel TrenchMOS logic level FET Source-drain diode VSD source-drain voltage IS =25A; VGS =0V; Tj = 25 °C; see Figure 17 -0.88 1.2 V trr reverse recovery time IS =20A; dIS/dt = -100 A/s; VGS =0 V; VDS =20V -43 - ns Qr recovered charge - 49 - nC Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Fig 5. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. Drain-source on-state resistance as a function of drain current; typical values Fig 8. Forward transconductance as a function of drain current; typical values 003aac470 0 20 40 60 80 0123 VGS (V) ID (A) Tj = 150 °C 25 °C 003aac474 0 50 100 150 024 6 8 10 VDS (V) ID (A) 2.2 2.4 2.6 2.8 VGS (V) = 3 4 10 003aac475 1 2 3 4 5 6 7 0 50 100 150 ID (A) RDSon (m Ω) VGS (V) = 3 V 4 10 003aac477 40 60 80 100 120 140 160 020 40 60 80 ID (A) gfs (S) |
Similar Part No. - PSMN2R0-30YL |
|
Similar Description - PSMN2R0-30YL |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |