PESD5V0U1UA datasheet(4/12 Pages) NXP

Part #	PESD5V0U1UA

Description	Ultra low capacitance unidirectional ESD protection diodes

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Manufacturer	NXP [NXP Semiconductors]

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PESD5V0U1UA_UB_UL_1

Product data sheet

Rev. 01 — 30 October 2008

4 of 12

NXP Semiconductors

PESD5V0U1UA/UB/UL

Ultra low capacitance unidirectional ESD protection diodes

6.

Characteristics

Table 9.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRWM

reverse standoff voltage

-

5

V

IRM

reverse leakage current

VRWM = 5 V

-

1

100

nA

VBR

breakdown voltage

IR = 5 mA

5.8

6.8

8.8

V

Cd

diode capacitance

f=1MHz

VR = 0 V

-

2

2.6

pF

VR = 5 V

-

1.7

2.3

pF

rdif

differential resistance

IR = 1 mA

-

100

Ω

f = 1 MHz; Tamb =25 °C

Fig 2.

Diode capacitance as a function of reverse

voltage; typical values

Fig 3.

V-I characteristics for a unidirectional

ESD protection diode

VR (V)

05

4

23

1

006aab348

1.8

1.7

1.9

2.0

Cd

(pF)

1.6

006aaa407

−VCL −VBR −VRWM

−IRM

−IR

−IPP

V

I

P-N

−

+

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