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PBSS5160U Datasheet(PDF) 2 Page - NXP Semiconductors |
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PBSS5160U Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 14 page PBSS5160U_4 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 04 — 2 October 2008 2 of 14 NXP Semiconductors PBSS5160U 60 V, 1 A PNP low VCEsat (BISS) transistor 2. Pinning information 3. Ordering information 4. Marking [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 base 2 emitter 3 collector 12 3 sym013 3 2 1 Table 3. Ordering information Type number Package Name Description Version PBSS5160U SC-70 plastic surface-mounted package; 3 leads SOT323 Table 4. Marking codes Type number Marking code[1] PBSS5160U 53* Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −80 V VCEO collector-emitter voltage open base - −60 V VEBO emitter-base voltage open collector - −5V IC collector current [1] - −0.7 A [2] - −0.86 A [3] - −1A ICM peak collector current single pulse; tp ≤ 1ms - −2A IB base current - −300 mA IBM peak base current single pulse; tp ≤ 1ms - −1A |
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