BAS32L_6

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 06 — 29 October 2008

5 of 10

NXP Semiconductors

BAS32L

High-speed switching diode

8.

Test information

Fig 5.

Diode capacitance as a function of reverse voltage; typical values

010

20

1.2

1.0

0.6

0.4

0.8

mgd004

(pF)

Fig 6.

Reverse recovery time test circuit and waveforms

Fig 7.

Forward recovery voltage test circuit and waveforms

trr

(1)

t

output signal

t

10 %

90 %

input signal

D.U.T.

SAMPLING

OSCILLOSCOPE

mga881

t

10 %

90 %

I

input signal

I

OSCILLOSCOPE

1 k

Ω

450

Ω

D.U.T.

mga882

VFR

t

output signal

V