CR8AM datasheet(2/5 Pages) MITSUBISHI

Part #	CR8AM

Description	MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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2 / 5 page

Feb.1999

MITSUBISHI SEMICONDUCTOR

〈THYRISTOR〉

CR8AM

MEDIUM POWER USE

NON-INSULATED TYPE, GLASS PASSIVATION TYPE

V1. The contact thermal resistance Rth (c-f) is 1.0

°C/W with greased.

ELECTRICAL CHARACTERISTICS

Test conditions

Tj=125

°C, VRRM applied

Tj=125

°C, VDRM applied

Tc=25

°C, ITM=25A, instantaneous value

Tj=25

°C, VD=6V, IT=1A

Tj=125

°C, VD=1/2VDRM

Tj=25

°C, VD=6V, IT=1A

Tj=25

°C, VD=12V

Junction to case

Unit

mA

V

mA

°C/W

Typ.

—

15

—

Symbol

IRRM

IDRM

VTM

VGT

VGD

IGT

IH

Rth (j-c)

Parameter

Repetitive peak reverse current

Repetitive peak off-state current

On-state voltage

Gate trigger voltage

Gate non-trigger voltage

Gate trigger current

Holding current

Thermal resistance

Limits

Min.

—

0.2

—

Max.

2.0

1.4

1.0

—

15

—

3.0

100

23

5 7 101

80

40

23

5 7 102

44

120

160

200

60

20

100

140

180

0

5

01

4

23

103

7

5

3

2

102

7

5

3

2

101

7

5

3

2

100

Tc = 125°C

MAXIMUM ON-STATE CHARACTERISTICS

ON-STATE VOLTAGE (V)

RATED SURGE ON-STATE CURRENT

CONDUCTION TIME

(CYCLES AT 60Hz)

PERFORMANCE CURVES

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