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TPDV1040 Datasheet(PDF) 2 Page - STMicroelectronics |
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TPDV1040 Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 5 page GATE CHARACTERISTICS (maximum values) Symbol Parameter Value Unit Rth (j-a) Contact to ambient 50 °C/W Rth (j-c) DC Junction to case for DC 1.2 °C/W Rth (j-c) AC Junction to case for 360 ° conduction angle ( F= 50 Hz) 0.9 °C/W Symbol Test Conditions Quadrant Value Unit IGT VD=12V (DC) RL=33Ω Tj=25 °C I-II-III MAX 200 mA VGT VD=12V (DC) RL=33Ω Tj=25 °C I-II-III MAX 1.5 V VGD VD=VDRM RL=3.3kΩ Tj=125 °C I-II-III MIN 0.2 V tgt VD=VDRM IG = 500mA dIG/dt = 3A/µs Tj=25 °C I-II-III TYP 2.5 µs IL IG=1.2 IGT Tj=25 °C I-III TYP 100 mA II 200 IH *IT= 500mA gate open Tj=25 °C TYP 50 mA VTM *ITM= 60A tp= 380µs Tj=25 °C MAX 1.8 V IDRM IRRM VDRM Rated VRRM Rated Tj=25 °C MAX 0.02 mA Tj=125 °C MAX 8 dV/dt * Linear slope up to VD=67%VDRM gate open Tj=125 °C MIN 500 V/ µs (dI/dt)c * (dV/dt)c = 200V/ µs Tj=125 °C MIN 35 A/ms (dV/dt)c = 10V/ µs 142 * For either polarity of electrode A2 voltage with reference to electrode A1. PG (AV) =1W PGM = 40W (tp = 20 µs) IGM =8A (tp =20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS THERMAL RESISTANCES TPDV 640 ---> 1240 2/5 |
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