TC2481

REV4_20070507

TRANSCOM, INC., 90 Dasoong 7

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

Fax: 886-6-5051602

P 1 / 4

0.5 W Low-Cost Packaged PHEMT GaAs Power FETs

FEATURES

• 27 dBm Typical Output Power at 6 GHz

• 11 dB Typical Linear Power Gain at 6 GHz

• High Linearity: IP3 = 37 dBm Typical at 6 GHz

• High Power Added Efficiency:

Nominal PAE of 37 % at 6 GHz

• Breakdown Voltage: BV

DGO

≥ 15 V

• Lg = 0.35 µm, Wg = 1.2 mm

• Tight Vp ranges control

• High RF input power handling capability

• 100 % DC Tested

DESCRIPTION

The TC2481 is packaged with the TC1401 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. All

devices are 100% DC tested to assure consistent quality. Typical applications include high dynamic range power

amplifiers for commercial applications.

°°°°C)

Symbol

CONDITIONS

MIN

TYP

MAX

UNIT

26.5

27

dBm

11

dB

IP3

Intercept Point of the 3

37

dBm

PAE

Power Added Efficiency at 1dB Compression Power, f = 6GHz

37

%

300

mA

200

mS

-1.7**

Volts

15

18

Volts

Thermal Resistance

50

°C/W

** For the tight control of the pinch-off voltage range, we divide TC2481 into 3 model numbers to fit customer design requirement

(1)TC2481P1519 : Vp = -1.5V to -1.9V (2)TC2481P1620 : Vp = -1.6V to -2.0V (3)TC2481P1721 : Vp = -1.7V to -2.1V

If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.

PHOTO ENLARGEMENT