TC2996D

REV2_20070503

TRANSCOM, INC., 90 Dasoong 7

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

Fax: 886-6-5051602

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2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs

FEATURES

• 12 W Typical Power at 2.45 GHz

• 11 dB Typical Linear Power Gain at 2.45 GHz

• High Linearity: IP3 = 50 dBm Typical

• High Power Added Efficiency: Nominal PAE of 40 %

• Suitable for High Reliability Application

• Wg = 30 mm

• 100 % DC and RF Tested

DESCRIPTION

The TC2996D is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power

transistor with input prematched circuits. The flange ceramic package provides the best thermal

conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality.

Typical applications include high dynamic range power amplifier for commercial applications.

Symbol

CONDITIONS

MIN

TYP

MAX

UNIT

Output Power at 1dB Gain Compression Point

39.5

41

dBm

Linear Power Gain

10

11

dB

IP3

Intercept Point of the 3

50

dBm

PAE

Power Added Efficiency at 1dB Compression Power

40

%

7.5

A

5400

mS

-1.7

Volts

20

22

Volts

Thermal Resistance

1.5

°C/W

PHOTO ENLARGEMENT