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TMBYV10-60 Datasheet(PDF) 2 Page - STMicroelectronics

Part No. TMBYV10-60
Description  SMALL SIGNAL SCHOTTKY DIODE
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

TMBYV10-60 Datasheet(HTML) 2 Page - STMicroelectronics

  TMBYV10-60 Datasheet HTML 1Page - STMicroelectronics TMBYV10-60 Datasheet HTML 2Page - STMicroelectronics TMBYV10-60 Datasheet HTML 3Page - STMicroelectronics TMBYV10-60 Datasheet HTML 4Page - STMicroelectronics TMBYV10-60 Datasheet HTML 5Page - STMicroelectronics  
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Symbol
Test Conditions
Min.
Typ.
Max.
Unit
IR*
Tj = 25
°C
VR = VRRM
0.5
mA
Tj = 100
°C
10
VF*IF = 1A
Tj = 25
°C
0.7
V
IF = 3A
1
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
C
Tj = 25
°C
VR = 0
150
pF
Tj = 25
°C
VR = 5V
40
DYNAMIC CHARACTERISTICS
* Pulse test: tp
≤ 300µs δ < 2%.
Forward current flow in a Schottky rectifier is due
to majority carrier conduction. So reverse recovery
is not affected by storage charge as in conventional
PN junction diodes.
Nevertheless, when the device switches from for-
ward biased condition to reverse blocking state,
current is required to charge the depletion capaci-
tance of the diode.
This current depends only of diode capacitance and
external circuit impedance. Satisfactory circuit be-
haviour analysis may be performed assuming that
Schottky rectifier consists of an ideal diode in par-
allel with a variable capacitance equal to the junc-
tion capacitance (see fig. 5 page 4/4).
TMBYV 10-60


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