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TMBAT49 Datasheet(PDF) 1 Page - STMicroelectronics

Part No. TMBAT49
Description  SMALL SIGNAL SCHOTTKY DIODE
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

TMBAT49 Datasheet(HTML) 1 Page - STMicroelectronics

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®
TMBAT 49
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against ex-
cessive voltage such as electrostatic discharges.
August 1999 Ed 1A
MELF
(Glass)
Symbol
Parameter
Value
Unit
VRRM
Repetitive Peak Reverse Voltage
80
V
IF
Forward Continuous Current
Ti = 70
°C
500
mA
IFRM
Repetitive Peak Forward Current
tp = 1s
δ ≤ 0.5
3A
IFSM
Surge non Repetitive Forward Current
tp = 10ms
10
A
Tstg
Tj
Storage and Junction Temperature Range
- 65 to + 150
- 65 to + 125
°C
°C
TL
Maximum Temperature for Soldering during 15s
260
°C
ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol
Test Conditions
Value
Unit
Rth(j-l)
Junction-leads
110
°C/W
THERMAL RESISTANCE
* Pulse test: tp
≤ 300µs δ < 2%.
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
IR *
Tj = 25
°CVR = 80V
200
µA
VF *
Tj = 25
°CIF = 10mA
0.32
V
Tj = 25
°CIF = 100mA
0.42
Tj = 25
°CIF = 1A
1
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
C
Tj = 25
°C
f = 1MHz
VR = 0V
120
pF
VR = 5V
35
DYNAMIC CHARACTERISTICS
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