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Document Number 83671

Rev. 2.0, 06-Sep-06

SFH615A/SFH6156

Vishay Semiconductors

Absolute Maximum Ratings

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is

not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Output

Coupler

Parameter

Test condition

Symbol

Value

Unit

Reverse voltage

6.0

V

DC Forward current

60

mA

Surge forward current

2.5

A

Parameter

Test condition

Symbol

Value

Unit

Collector-emitter voltage

70

V

Emitter-collector voltage

7.0

V

Collector current

50

mA

100

mA

Parameter

Test condition

Symbol

Value

Unit

Isolation test voltage (between

emitter and detector, refered to

climate DIN 40046, part 2,

Nov. 74

t = 1.0 s

5300

Creepage

≥ 7.0

mm

Clearance

≥ 7.0

mm

Insulation thickness between

emitter and detector

≥ 0.4

mm

Comparative tracking index per

DIN IEC 112/VDE 0303, part 1

≥ 175

Isolation resistance

Ω

Ω

Storage temperature range

- 55 to + 150

°C

Ambient temperature range

- 55 to + 100

°C

Soldering temperature

max. 10 s, Dip soldering

distance to seating plane

≥ 1.5 mm

260

°C

0

50

100

150

200

0

25

50

75

100

125

150

18483

Phototransistor

Diode

Figure 1. Permissible Power Dissipation vs. Ambient Temperature