Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

VSKT26 Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. VSKT26
Description  Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 27 A
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

VSKT26 Datasheet(HTML) 2 Page - Vishay Siliconix

  VSKT26 Datasheet HTML 1Page - Vishay Siliconix VSKT26 Datasheet HTML 2Page - Vishay Siliconix VSKT26 Datasheet HTML 3Page - Vishay Siliconix VSKT26 Datasheet HTML 4Page - Vishay Siliconix VSKT26 Datasheet HTML 5Page - Vishay Siliconix VSKT26 Datasheet HTML 6Page - Vishay Siliconix VSKT26 Datasheet HTML 7Page - Vishay Siliconix VSKT26 Datasheet HTML 8Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 94418
2
Revision: 22-Apr-08
VSK.26..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor
(ADD-A-PAKTM Generation 5 Power Modules), 27 A
ELECTRICAL SPECIFICATIONS
Notes
(1) I2t for time tx = I2√t x √tx
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(3) 16.7 % x
π x I
AV < I < π x IAV
(4) I >
π x I
AV
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
IRRM,
IDRM
AT 125 °C
mA
VSK.26
04
400
500
400
15
06
600
700
600
08
800
900
800
10
1000
1100
1000
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current
(thyristors)
IT(AV)
180° conduction, half sine wave,
TC = 85 °C
27
A
Maximum average forward current
(diodes)
IF(AV)
Maximum continuous RMS on-state current
as AC switch
IO(RMS)
60
Maximum peak, one-cycle
non-repetitive on-state
or forward current
ITSM
or
IFSM
t = 10 ms
No voltage
reapplied
Sinusoidal
half wave,
initial TJ = TJ maximum
400
t = 8.3 ms
420
t = 10 ms
100 % VRRM
reapplied
335
t = 8.3 ms
350
t = 10 ms
TJ = 25 °C, no voltage reapplied
470
t = 8.3 ms
490
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
Initial TJ = TJ maximum
800
A2s
t = 8.3 ms
730
t = 10 ms
100 % VRRM
reapplied
560
t = 8.3 ms
510
t = 10 ms
TJ = 25 °C, no voltage reapplied
1100
t = 8.3 ms
1000
Maximum I2
√t for fusing
I2
√t (1)
t = 0.1 to 10 ms, no voltage reapplied
8000
A2
√s
Maximum value or threshold voltage
VT(TO) (2)
Low level (3)
TJ = TJ maximum
0.92
V
High level (4)
0.95
Maximum value of on-state
slope resistance
rt (2)
Low level (3)
TJ = TJ maximum
12.11
m
Ω
High level (4)
11.82
Maximum peak on-state or forward voltage
VTM
ITM = π x IT(AV)
TJ = 25 °C
1.95
V
VFM
IFM = π x IF(AV)
Maximum non-repetitive rate of
rise of turned on current
dI/dt
TJ = 25 °C, from 0.67 VDRM,
ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 µs, tp > 6 µs
150
A/µs
Maximum holding current
IH
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
200
mA
Maximum latching current
IL
TJ = 25 °C, anode supply = 6 V, resistive load
400
or
I
(RMS)
I
(RMS)


Html Pages

1  2  3  4  5  6  7  8 


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn