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ST780C06L0PBF Datasheet(PDF) 2 Page - Vishay Siliconix |
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ST780C06L0PBF Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 94415 2 Revision: 11-Aug-08 ST780CLPbF Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 1350 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at heatsink temperature IT(AV) 180° conduction, half sine wave double side (single side) cooled 1350 (500) A 55 (85) °C Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 2700 A Maximum peak, one-cycle non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 24 400 t = 8.3 ms 25 600 t = 10 ms 100 % VRRM reapplied 20 550 t = 8.3 ms 21 500 Maximum I2t for fusing I2t t = 10 ms No voltage reapplied 2986 kA2s t = 8.3 ms 2726 t = 10 ms 100 % VRRM reapplied 2112 t = 8.3 ms 1928 Maximum I2 √t for fusing I2 √t t = 0.1 to 10 ms, no voltage reapplied 29 860 kA2 √s Low level value of threshold voltage VT(TO)1 (16.7 % x π x I T(AV) < I < π x IT(AV)), TJ = TJ maximum 0.80 V High level value of threshold voltage VT(TO)2 (I > π x I T(AV)), TJ = TJ maximum 0.90 Low level value of on-state slope resistance rt1 (16.7 % x π x I T(AV) < I < π x IT(AV)), TJ = TJ maximum 0.14 m Ω High level value of on-state slope resistance rt2 (I > π x I T(AV)), TJ = TJ maximum 0.13 Maximum on-state voltage VTM Ipk = 3600 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.31 V Maximum holding current IH TJ = 25 °C, anode supply 12 V resistive load 600 mA Typical latching current IL 1000 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned-on current dI/dt Gate drive 20 V, 20 Ω, t r ≤ 1 µs TJ = TJ maximum, anode voltage ≤ 80 % VDRM 1000 A/µs Typical delay time td Gate current 1 A, dIg/dt = 1 A/µs Vd = 0.67 % VDRM, TJ = 25 °C 1.0 µs Typical turn-off time tq ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/µs, VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs 150 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 80 mA |
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