MBR30H90PT & MBR30H100PT

Vishay General Semiconductor

Document Number: 88678

Revision: 25-Mar-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

1

Dual Common-Cathode High-Voltage Schottky Rectifier

High Barrier Technology for Improved High Temperature Performance

FEATURES

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• High frequency operation

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode

power

supplies,

freewheeling

diodes,

dc-to-dc

converters or polarity protection application.

MECHANICAL DATA

Case: TO-247AD (TO-3P)

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

15 A x 2

90 V, 100 V

265 A

0.67 V

5.0 µA

175 °C

PIN 1

PIN 3

CASE

PIN 2

TO-247AD (TO-3P)

1

2

3

PARAMETER

SYMBOL

MBR30H90PT

MBR30H100PT

UNIT

Maximum repetitive peak reverse voltage

90

100

V

Maximum working peak reverse voltage

90

100

V

Maximum DC blocking voltage

90

100

V

Maximum average forward rectified current

total device

per diode

30

15

A

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load per diode

265

A

per diode

1.0

A

per diode

7.5

mJ

dV/dt

10 000

V/µs

Operating junction and storage temperature range

- 65 to + 175

°C