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S822TW Datasheet(PDF) 2 Page - Vishay Siliconix |
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S822TW Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com 2 Document Number 85050 Rev. 1.5, 08-Sep-08 S822T / S822TW / S822TRW Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Maximum Thermal Resistance 1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit Collector-base voltage VCBO 12 V Collector-emitter voltage VCEO 6V Emitter-base voltage VEBO 2V Collector current IC 8mA Total power dissipation Tamb ≤ 125 °C Ptot 30 mW Junction temperature Tj 150 °C Storage temperature range Tstg - 65 to + 150 °C Parameter Test condition Symbol Value Unit Junction ambient 1) RthJA 450 K/W Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter cut-off current VCE = 12 V, VBE = 0 ICES 100 μA Collector-base cut-off current VCB = 8 V, IE = 0 ICBO 100 nA Emitter-base cut-off current VEB = 1 V, IC = 0 IEBO 1 μA Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 6V Collector-emitter saturation voltage IC = 5 mA, IB = 0.5 mA VCEsat 0.1 0.4 V DC forward current transfer ratio VCE = 3 V, IC = 1 mA hFE 40 90 150 |
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