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IMBD4448-V Datasheet(PDF) 2 Page - Vishay Siliconix |
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IMBD4448-V Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com 2 Document Number 85732 Rev. 1.4, 07-Apr-05 IMBD4448-V Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified 1) Device on fiberglass substrate, see layout (SOT-23). Electrical Characteristics Tamb = 25 °C, unless otherwise specified Layout for RthJA test Thickness: Fiberglass 1.5 mm (0.059 in.) Copper leads 0.3 mm (0.012 in.) Parameter Test condition Symbol Value Unit Thermal resistance junction to ambient air RthJA 4501) °C/W Junction temperature Tj 150 °C Storage temperature range TS - 65 to + 150 °C Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 5 mA VF 0.62 0.72 V IF = 100 mA VF 1.0 V Leakage current VR = 70 V IR 2.5 µA VR = 70 V, Tj = 150 °C IR 50 µA VR = 25 V, Tj = 150 °C IR 30 µA Diode capacitance VF = VR = 0 Ctot 4pF Reverse recovery time (see figures) IF = 10 mA, IR = 10 mA, VR = 6 V, RL = 100 Ω trr 4ns 17451 15 (0.59) 12 (0.47) 0.8 (0.03) 5 (0.2) 7.5 (0.3) 3 (0.12) 1 (0.4) 1 (0.4) 2 (0.8) 2 (0.8) 1.5 (0.06) 5.1 (0.2) |
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