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P4SMA170A Datasheet(PDF) 1 Page - Vishay Siliconix |
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P4SMA170A Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page P4SMA Series Vishay General Semiconductor Document Number: 88367 Revision: 21-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 Surface Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional 400 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % (300 W above 91 V) • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial and telecommunication. MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, high reliability/ automotive grade (AEC Q101 qualified) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: For uni-directional types the band denotes cathode end, no marking on bi-directional types DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional devices use CA suffix (e.g. P4SMA10CA). Electrical characteristics apply in both directions. PRIMARY CHARACTERISTICS VBR uni-directional 6.8 V to 540 V VBR bi-directional 6.8 V to 220 V PPPM 400 W, 300 W PD 3.3 W IFSM (uni-directional only) 40 A TJ max. 150 °C DO-214AC (SMA) Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2. Rating is 300 W above 91 V (2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1) PPPM 400 W Peak pulse current with a 10/1000 µs waveform (1) (Fig. 3) IPPM See next table A Power dissipation on infinite heatsink, TA = 50 °C PD 3.3 W Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) IFSM 40 A Operating junction and storage temperature range TJ, TSTG - 65 to + 150 °C |
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