SUU50N10-18P datasheet(1/8 Pages) VISHAY

Part #	SUU50N10-18P

Description	N-Channel 100-V (D-S), 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SUU50N10-18P

New Product

Document Number: 68817

S-81956-Rev. B, 25-Aug-08

www.vishay.com

1

N-Channel 100-V (D-S), 175 °C MOSFET

FEATURES

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

•

100 % UIS Tested

APPLICATIONS

•

Primary Side Switch

•

Isolated DC/DC Converter

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

100

0.0185 at VGS = 10 V

50

48 nC

TO-251

S

GD

Top View

Drain Connected to

Drain-Tab

Ordering Information: SUU50N10-18P-E3 (Lead (Pb)-free)

N-Channel MOSFET

G

D

S

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

100

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

50a

A

TC = 100 °C

39

TA = 25 °C

8.2b

TA = 100 °C

5.8b

Pulsed Drain Current

IDM

100

Continuous Source-Drain Diode Current

TC = 25 °C

IS

50a

TA = 25 °C

2.0b

Single Pulse Avalanche Current

L = 0.1 mH

IAS

45

Avalanche Energy

EAS

101

mJ

Maximum Power Dissipation

TC = 25 °C

PD

136.4

W

TC = 100 °C

68.2

TA = 25 °C

3.0b

TA = 100 °C

1.5b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb

Steady State

RthJA

40

50

°C/W

Maximum Junction-to-Case

Steady State

RthJC

0.85

1.1

RoHS

COMPLIANT

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