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SUU50N10-18P Datasheet(PDF) 1 Page - Vishay Siliconix |
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SUU50N10-18P Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Vishay Siliconix SUU50N10-18P New Product Document Number: 68817 S-81956-Rev. B, 25-Aug-08 www.vishay.com 1 N-Channel 100-V (D-S), 175 °C MOSFET FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • Primary Side Switch • Isolated DC/DC Converter PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) 100 0.0185 at VGS = 10 V 50 48 nC TO-251 S GD Top View Drain Connected to Drain-Tab Ordering Information: SUU50N10-18P-E3 (Lead (Pb)-free) N-Channel MOSFET G D S Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 50a A TC = 100 °C 39 TA = 25 °C 8.2b TA = 100 °C 5.8b Pulsed Drain Current IDM 100 Continuous Source-Drain Diode Current TC = 25 °C IS 50a TA = 25 °C 2.0b Single Pulse Avalanche Current L = 0.1 mH IAS 45 Avalanche Energy EAS 101 mJ Maximum Power Dissipation TC = 25 °C PD 136.4 W TC = 100 °C 68.2 TA = 25 °C 3.0b TA = 100 °C 1.5b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb Steady State RthJA 40 50 °C/W Maximum Junction-to-Case Steady State RthJC 0.85 1.1 RoHS COMPLIANT |
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